HCD type high-density plasma etching device
Achieving high-density plasma with a simple mechanism. Compatible with substrates from wafers to 1 m². Damage-free etching of Si-based materials, metals, organic films, and various thin films.
Achieves a plasma density that is an order of magnitude higher compared to conventional capacitively coupled plasma etching devices. High-precision etching is possible solely through innovations in the electrode structure, without using high-frequency antennas or magnets. It also has high hardware compatibility with conventional etching devices (CCP type and ICP type), contributing to low cost, high reliability, and operational efficiency. Capable of etching not only wafer-level substrates but also large substrates. A new type of high-density plasma etching device that can smoothly accommodate the increase in substrate size.
- Company：神港精機 東京支店
- Price：Other
